july 2006 FDP3651U n-channel powertrench ? mosfet ?2006 fairchild semiconductor corporation FDP3651U rev. a www.fairchildsemi.com 1 FDP3651U n-channel powertrench ? mosfet 100v, 80a, 15m ? features ?r ds(on) =13 m ? (typ.), v gs = 10v, i d = 40a ?q g(tot) =49 nc(typ.), v gs = 10 v ? low miller charge ? low q rr body diode ? uis capability (single pulse/repetitive pulse) applications ? dc/dc converters and off-line ups ? distributed power architectures and vrms ? primary switch for 24v and 48v systems ? high voltage synchronous rectifier to-220ab fdp series drain drain gate source (flang e) mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v dss drain to source voltage 100 v v gss gate to source voltage 20 v i d drain current -continuous 80 a -pulsed (note 1) 220 p d power dissipation 255 w e as single pulsed avalanche energy (note 2) 266 mj t j , t stg operating and storage temperature -55 to 175 c t l maximum lead temperature soldering purposes, 1/8? from case for 5 seconds 300 c r ja thermal resistance , junction to ambient 62 c/w r jc thermal resistance , junction to case 0.59 c/w device marking device reel size tape width quantity FDP3651U FDP3651U tube n/a 50 units
FDP3651U n-channel powertrench ? mosfet FDP3651U rev. a www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 100 - - v i dss zero gate voltage drain current v ds = 80v v gs = 0v - - 1 a t c =150 c - - 250 a i gss gate to source leakage current v gs = 20v - - 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = -250 a 3.5 4.5 5.5 v r ds(on) drain to source on resistance v gs = 10v , i d = 80a - 15 18 m ? v gs = 10v , i d = 40a - 13 15 v gs =10v, i d =40a,t j =175 o c - 32 37 dynamic characteristics c iss input capacitance v ds = 25v,v gs = 0v f=1mhz - 4152 5522 pf c oss output capacitance - 485 728 pf c rss reverse transfer capacitance - 89 118 pf q g(tot) total gate charge v gs = 0v to 10v v dd = 50v i d = 80a - 49 69 nc q g(th) threshold gate charge v gs = 0v to 2v - 7 9.8 nc q gs gate to source gate charge - 23 - nc q gd gate to drain charge - 16 - nc resistive switching characteristics t (on) turn-on time v dd = 50v, i d = 80a v gs = 10v, r gs = 5.0 ? - - 64 ns t d(on) turn-on delay time - 15 27 ns t r rise time - 16 29 ns t d(off) turn-off delay time - 32 52 ns t f fall time - 14 26 ns t (off) turn-off time - - 78 ns drain-source diode characteristics v sd source to drain diode forward voltage i sd = 80a - 0.99 1.25 v i sd = 40a - 0.88 1.0 v t rr reverse recovery time i s = 40 a, di/dt = 100a/ s - 70 105 ns q rr reverse recovery charge - 202 303 nc notes: 1. pulse test:pulse width<300us,duty cycle<2.0% 2. l=0.13mh, i as = 64a, v dd =50v, r g =25 ? , starting t j =25 o c
FDP3651U n-channel powertrench ? mosfet FDP3651U rev. a www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. on region characteristics 012345 0 20 40 60 80 100 120 pulse duration = 80 s duty cycle = 0.5%max v gs = 8v v gs = 10v v gs = 7v v gs = 20v i d , drain current (a) v ds , drain to source voltage (v) figure 2. normalized 020406080100120 0 1 2 3 4 5 pulse duration = 80 s duty cycle = 0.5%max normalized drain to source on-resistance i d , drain current(a) v gs = 20v v gs = 10v v gs = 8v v gs = 7v on-resistance vs drain current and gate voltage figure 3. -80 -40 0 40 80 120 160 200 0.4 0.8 1.2 1.6 2.0 2.4 2.8 i d = 80a v gs = 10v normalized drain-source on-resistance t j , junction temperature ( o c ) normalized on resistance vs junction temperature figure 4. 8 101214161820 0 10 20 30 40 50 60 pulse duration = 80 s duty cycle = 0.5%max t j = 175 o c t j = 25 o c i d = 80a r ds(on) , on-resistance ( m ? ) v gs , gate to source voltage (v) on-resistance vs gate to source voltage figure 5. transfer characteristics 246810 0 20 40 60 80 100 120 pulse duration = 80 s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 175 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 10 100 1000 t j = -55 o c t j = 25 o c t j = 175 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) source to drain diode forward voltage vs source current
FDP3651U n-channel powertrench ? mosfet FDP3651U rev. a www.fairchildsemi.com 4 figure 7. 0 102030405060 0 2 4 6 8 10 v dd = 50v v dd = 55v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 45v gate charge characteristics figure 8. 0.1 1 10 10 0 10 100 1000 10000 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss capacitance vs drain to source voltage figure 9. 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 t j = 25 o c t j = 150 o c i as , avalanche current ( a ) t av , time in avalanche(ms) unclamped inductive switching capability figure 10. 25 50 75 100 125 150 175 0 20 40 60 80 100 i d , drain current (a) t c , case temperature ( o c ) v gs =8v v gs =10v package may limit current in this region maximum continuous drain current vs ambient temperature figure 11. 110100 0.1 1 10 100 10us 500 100us 1ms 10ms dc i d , drain current (a) v ds , drain to source voltage (v) single pulse t j =max rated t c = 25 o c operation in this area may be limited by r ds(on) 200 forward bias safe operating area figure 12. single pulse maximum power dissipation 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 5 single pulse v gs = 10v p ( pk ) , peak transient power (w) t, pulse width (s) t c = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 175 t c ? 150 ---------------------- - typical characteristics t j = 25c unless otherwise noted
FDP3651U n-channel powertrench ? mosfet FDP3651U rev. a www.fairchildsemi.com 5 figure 13. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z ja t, rectangular pulse duration(s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z jc x r jc + t c typical characteristics t j = 25c unless otherwise noted
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